Plessey Semiconductors Ltd has made an order of CRIUS II-XL reactor on Germany-based MOCVD system supplier Aixtron. The system will be used to grow GaN-on-Si materials in a 7 x 6-inch wafer configuration, and will be installed in Plessey’s facility in Plymouth, UK.

In February 2012, Plessey acquired CamGaN Limited, a University of Cambridge spin-off formed to commercialize the growth of GaN LEDs on large-area silicon substrates.

Barry Dennington, COO of Plessey Semiconductors, comments, “We are on schedule for the production of a world-class LED that will become the high-performance lighting LED at the price break-through the market has been waiting for. We will be in early prototype production before the end of Q3 2012 and in full production by Q2 2013.”