AIXTRON, the world's leading manufacturer of MOCVD equipment, has developed AIX G5+ featuring 5x200 mm GaN-on-Si (Gallium Nitride on Silicon) technology package for its AIX G5 Planetary Reactor platform.
 
Following a customer-focused development program, this technology was designed and created in AIXTRON’s R&D laboratory and consists of specially designed reactor hardware and process capabilities. It is now available as a part of the AIX G5 product family and any existing G5 system can be upgraded to this latest version. Details of G5+ have already been disclosed to some of AIXTRON’s key customers.
 
“GaN-on-Si technology is a hot topic for MOCVD users and manufacturers today”, states Dr. Rainer Beccard, Vice President Marketing at AIXTRON. “It is the technology of choice for the emerging power electronics market segment, and also a very promising candidate for future high performance and low cost High Brightness LED manufacturing. The wafer size and material plays a crucial role when it comes to cost effective manufacturing processes, and thus the transition to 200 mm Standard Silicon wafers is a logical next step on the manufacturing roadmaps, as it offers unique economies of scale.”