T
i
anyu Semicoductor Technology Co Ltd, a manufacturer of silicon carbide (SiC) epitaxial wafers based in Dongguang, Guangdong Province, China, has added another hydrogen purifier from Ivyland, PA, USA-based Power+Energy Inc (P+E). The purifier is installed to support capacity expansion at Tianyu’
s
facility in Dongguan City.
Founded in January 2009 in Songshan Lake National High-tech Industrial Development Zone of Dongguan City, Guangdong province, Tianyu produces 4H-SiC epiwafers with diameters of 2-, 3- and 4-inches and (in the near future) 6-inches.
“
W
e
have seen excellent results from the Power and Energy hydrogen purifier for our Aixtron silicon carbide reactors,”
s
ays Tianyu researcher Sun Guosheng.
The compact 9000C Series purifier purifies hydrogen used in the Aixtron metal-organic chemical vapour deposition (MOCVD) epitaxial growth process for SiC wafers. Oxygen, moisture and nitrogen contamination must be completely eliminated to parts-per-billion levels in SiC growth processes.
The 9000C purifier uses patented micro-channel palladium membrane technology to remove all impurities to parts-per-trillion levels. P+E says that it provides a durable, production-worthy hydrogen purifier that supports any flow rate and any inlet gas source quality. The compact design can be wall-mounted to provide ultra-high-purity (UHP) hydrogen for MOCVD epitaxial processes.
“
T
i
anyu has an impressive facility and they are poised for rapid growth as the first China-based supplier of SiC epi wafers,”
s
ays P+E’
s
Stuart Bestrom. “
W
e
are pleased to continue supporting this expansion,”
h
e adds. ”
P
+
E has been supporting customers in SiC processing for over 12 years, including many leading suppliers of SiC materials and epiwafers.”
P+E says that hydrogen gas purifiers are critical to the rapidly expanding high-efficiency power devices industry, whether silicon carbide or gallium nitride. The firm says that its micro-channel Pd membrane technology allows users to continue to employ the same technology in high-volume production, regardless of source gas quality.