B
e
rnin, France-based Soitec, which makes engineered substrates including silicon-on-insulator (SOI) wafers (as well as III-V epiwafers through its Picogiga International division), has signed a licensing and technology-transfer agreement with compound semiconductor materials provider Sumitomo Electric Industries Ltd of Osaka, Japan who will be allowed to use Soitec’
s
proprietary Smart Cut technology to manufacture engineered gallium nitride (GaN) substrates.
The firms says that the announcement is a key step in the ongoing strategic alliance, launched in December 2010 to leverage Sumitomo Electric’
s
expertise in materials technology and Soitec’
s
unique Smart Cut layer-transfer technology, to develop the global market for GaN substrates used in light-emitting diode (LED) lighting applications.
The joint development program between Soitec and Sumitomo Electric has already demonstrated the capability to produce 4- and 6-inch engineered GaN substrates in a pilot production environment. High-quality, ultra-thin layers of GaN have been repeatedly transferred from a single-source wafer onto multiple substrates developed by Sumitomo Electric. The engineered wafers have exhibited high functionality at a low production cost, say the firms. Having proven the effectiveness of the technology- transfer process, Sumitomo Electric will now industrialize the product and invest in Smart Cut technology.
“
T
o
day’
s
announcement represents a very important step in the material roadmap for the compound semiconductor market, and a first step in our strategy,”
b
elieves Fré
d
é
r
i
c Dupont, VP of Soitec’
s
Specialty Electronics business unit. “
T
h
is is the first licensing agreement of our Smart Cut technology to leverage a reusable, expensive base material to bring an economically viable process to this field. Sumitomo Electric’
s
proven track record in innovative materials development and their in-house manufacturing expertise are key assets in developing the most cost-effective substrate material for high-quality LEDs,”
h
e adds.
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B
y
combining the two innovative technologies –
S
oitec’
s
Smart Cut technology and our high-quality, large-diameter, free-standing GaN substrates –
w
e are able to offer a high-value proposition to our LED customers,”
s
ays Yoshiki Miura, general manager of Sumitomo Electric’
s
Compound Semiconductor Materials Division. “
S
o
itec’
s
unique material-transfer technology enables the reuse of GaN wafers several times, achieving a substantial reduction in the cost of high-quality GaN materials to serve high-volume applications.”