E
U
has recently launched a research project“
N
a
nostructured Efficient White LEDs based on short-period superlattices and quantum dots”
o
r NEWLED for short, aiming to develop high-efficiency and high-brightness monolithic and hybrid all-semiconductor white GaN-based LEDs. This project started in November 2012 and will run for 4 years. The EU will provide EUR 8.4 million (around $11 million) in funding as a contribution to the total project cost of EUR 11.76 million (15.4 million).
The project is led by the University of Dundee, UK, and includes 13 other industrial and academic partners from a range of European countries. The full list can be viewed on the EU project page.
The project aims to develop phosphor-free LED structures with increased brightness (power emitted per surface per angle). If successful, this will avoid power losses due to phosphor conversion, and the problem of different ageing rates of the GaN LED pump.
NEWLED will enhance the efficiency of yellow InGaAlP/AlGaAs LEDs using bandgap-engineered superlattices. These LEDs will replace the phosphor emission that is a normal constituent of phosphor-converted LEDs. Also, novel light-extraction approaches will target advanced directionality and color adjustment.
Values of 50 to 60% overall efficiency with a conversion of greater than 200 lm/W for warm-white LEDs are targeted, along with the realization of a color-rendering index (CRI) of greater than 95. Meanwhile, the team will also investigate advanced packaging to enable effective heat dissipation and light management.
The devices will have immediate applications in automotive, industrial lighting and displays industries. Widespread implementation would reduce global energy consumption by approximately 10% and reduce CO
2 e
missions by 3 Bn tonnes with consequent economic and environmental benefits.