US company Transphorm Inc. has scaled up to 200 mm wafers smoothly and quickly with its latest order of AIXTRON’s G5+ MOCVD system. The AIX G5+ is based on the proven AIX G5 HT reactor platform. The stability and uniformity of results in this system enable higher device yields than for any other MOCVD platform on the market.
 
Primit Parikh, President of Transphorm comments: “We are not just increasing our capacity with this order. This new system also expands our capability from 150 mm to 200 mm diameter wafers, providing economies of scale. We are projecting lower costs of ownership with larger wafer diameters, allowing us to bring this transformative technology into much wider use.”
 
Dr. Frank Wischmeyer, Vice President and Program Manager Power Electronics at AIXTRON, comments: “When we developed the AIXTRON G5+ system we had customers like Transphorm in mind. GaN-on-Si is rapidly developing and the industry expects commercial products in the near future. In order to be successful, GaN-on-Si needs to deliver the highest quality at the lowest cost of ownership. We have developed the G5+ to deliver extremely stable, uniform processing on multiple large diameter wafer runs.”